A NOVEL DOUBLE HETEROSTRUCTURE - THE GAAS/GAPASSB SYSTEM

被引：5

作者：

LENDVAY, E

GOROG, T

ANDOR, L

PETRAS, L

TOTH, AL

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 79卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90574-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：928 / 934

页数：7

共 15 条

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[10] LATTICE DEFORMATIONS AND MISFIT DISLOCATIONS IN GALNASP-INP DOUBLE-HETEROSTRUCTURE LAYERS [J].

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