HIGH REFLECTIVITY AND LOW-RESISTANCE 1.55-MU-M AL0.65IN0.35AS/GA0.63IN0.37AS STRAINED QUARTER-WAVE BRAGG REFLECTOR STACK

被引：6

作者：

GUY, P ^{[1
]}

WOODBRIDGE, K ^{[1
]}

HOPKINSON, M ^{[1
]}

机构：

[1] UNIV SHEFFIELD, DEPT ELECTR & ELECT ENGN, SHEFFIELD S10 2TN, S YORKSHIRE, ENGLAND

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 22期

关键词：

DISTRIBUTED BRAGG REFLECTOR LASERS; SEMICONDUCTOR LASERS;

D O I：

10.1049/el:19931296

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reflector stacks grown for use in devices operating at 1.55mum on InP substrates normally use lattice matched quaternary alloys and a large number of periods to obtain a high reflectivity. In this work therefore we have investigated the use of Al0.65In0.35As/Ga0.63In0.37As ternary layers, which are approximately1% strained with respect to the substrate. Results show that over 80% reflectivity and a low resistance can be obtained with only a 12 period structure.

引用

页码：1947 / 1948

页数：2

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