HIGH-REFLECTANCE ALPSB/GAPSB DISTRIBUTED-BRAGG-REFLECTOR MIRRORS ON INP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：8

作者：

SHIMOMURA, H

ANAN, T

MORI, K

SUGOU, S

机构：

[1] Optoelectronic NEC Laboratory, Real World Computing Partnership, c/o Opto-electronics Research Laboratories, NEC Corporation, Ibaraki 305, 34 Miyukigaoka, Tsukuba

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 04期

关键词：

DISTRIBUTED BRAGG REFLECTOR LASERS; EPITAXY AND EPITAXIAL GROWTH;

D O I：

10.1049/el:19940230

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Large relractive-index difference, 1.55 mum distributed Bragg reflectors, using AlPSb and GaPSb lattice matched to InP, are demonstrated. This is the first report of AlPSb/GaPSb quarter-wave distributed Bragg reflectors. This mirror structure will be useful for InP-based surface-emitting laser applications at long wavelengths.

引用

页码：314 / 315

页数：2

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