HIGHLY DOPED 1.55-MU-M GAXIN1-XAS/INP DISTRIBUTED-BRAGG-REFLECTOR STACKS

被引：7

作者：

GUY, P ^{[1
]}

WOODBRIDGE, K ^{[1
]}

HAYWOOD, SK ^{[1
]}

HOPKINSON, M ^{[1
]}

机构：

[1] UNIV SHEFFIELD, DEPT ELECTR & ELECT ENGN, SERC, SEMICOND FACIL IIIV, SHEFFIELD S1 4DU, S YORKSHIRE, ENGLAND

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 18期

关键词：

DISTRIBUTED BRAGG REFLECTOR LASERS; GALLIUM INDIUM ARSENIDE; INDIUM PHOSPHIDE; REFLECTION MODULATORS;

D O I：

10.1049/el:19941055

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have investigated 20 period lattice matched mirror stacks doped to 5 X 10(18)cm(-1) and 10(19)cm(-1) at 1.55 mu m in Ga(x)In(1-x)AS/InP and have obtained greater than 95% reflectivity over 100nm and peak reflectivities up to 98%.

引用

页码：1526 / 1527

页数：2

共 11 条

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