HIGH REFLECTIVITY 1.55-MU-M INP/INGAASP BRAGG MIRROR GROWN BY CHEMICAL BEAM EPITAXY

被引：35

作者：

CHOA, FS

TAI, K

TSANG, WT

CHU, SNG

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 22期

关键词：

D O I：

10.1063/1.105870

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the chemical-beam epitaxial (CBE) growth of InP/InGaAsP Bragg mirrors around 1.55-mu-m wavelength region. Mirrors with nearly 100% reflectivity and with more than 400 angstrom flat top region in the Bragg band have been achieved by using 45 pairs of InP (1348 angstrom) and InGaAsP (1216 angstrom lambda(g) = 1.45-mu-m) quarter wavelength layers which have a total thickness of 11.5-mu-m. Excellent uniformity of the layer thickness and optical quality in both horizontal and vertical directions were obtained. This demonstrates the unique capability of CBE in maintaining uniform and reproducible growth of InP/InGaAsP during a long growth period.

引用

页码：2820 / 2822

页数：3

共 4 条

[1]

CHOA FS, 1991, PHOTON TECHNOL LETT, V3, P697

[2] SURFACE-EMITTING MICROLASERS FOR PHOTONIC SWITCHING AND INTERCHIP CONNECTIONS [J].