QUARTER-WAVE BRAGG REFLECTOR STACK OF INP-IN0.53GA0.4MAS FOR 1.65 MU-M WAVELENGTH

被引：21

作者：

DEPPE, DG

GERRARD, ND

PINZONE, CJ

DUPUIS, RD

SCHUBERT, EF

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 04期

关键词：

D O I：

10.1063/1.102814

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Quarter-wave semiconductor mirrors of InP-In0.53Ga 0.47As for high reflectivity at 1.65 μm wavelength are epitaxially grown using metalorganic chemical vapor deposition. Doping of the In 0.53Ga0.47As layers is found to be critical for high reflectivity at wavelengths corresponding to the In0.53Ga 0.47As band gap. n-type doping reduces the band-to-band absorption resulting in high reflectivity while p-type doped mirrors show reduced reflectivity.

引用

收藏

页码：315 / 317

页数：3

相关论文

共 21 条

[1]

BORN M, 1959, PRINCIPLES OPTICS, pCH1

[2] MULTIPLE QUANTUM-WELL REFLECTION MODULATOR [J].

BOYD, GD ;

MILLER, DAB ;

CHEMLA, DS ;

MCCALL, SL ;

GOSSARD, AC ;

ENGLISH, JH .

APPLIED PHYSICS LETTERS, 1987, 50 (17) :1119-1121

[3] ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].

BURSTEIN, E .

PHYSICAL REVIEW, 1954, 93 (03) :632-633

[4] CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV [J].

CASEY, HC ;

SELL, DD ;

WECHT, KW .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :250-257

[5] EVIDENCE FOR LOW SURFACE RECOMBINATION VELOCITY ON N-TYPE INP [J].

CASEY, HC ;

BUEHLER, E .

APPLIED PHYSICS LETTERS, 1977, 30 (05) :247-249

[6] GAINASP-INP SURFACE EMITTING LASER (LAMBDA = 1.4 MU-M, 77-K) WITH HETEROMULTILAYER BRAGG REFLECTOR [J].

CHAILERTVANITKUL, A ;

IGA, K ;

MORIKI, K .

ELECTRONICS LETTERS, 1985, 21 (07) :303-304

[7] REFRACTIVE-INDEX DATA FROM GAXIN1-XASYP1-Y FILMS [J].

CHANDRA, P ;

COLDREN, LA ;

STREGE, KE .

ELECTRONICS LETTERS, 1981, 17 (01) :6-7

[8] LASER TRANSITION AND WAVELENGTH LIMITS OF GAAS [J].

DAPKUS, PD ;

HOLONYAK, N ;

ROSSI, JA ;

WILLIAMS, FV ;

HIGH, DA .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) :3300-&

[9]

Dupuis R. D., 1979, Gallium Arsenide and Related Compounds 1978, P1

[10] OPTICAL BISTABILITY IN SEMICONDUCTORS [J].

GIBBS, HM ;

MCCALL, SL ;

VENKATESAN, TNC ;

GOSSARD, AC ;

PASSNER, A ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1979, 35 (06) :451-453