DIGITAL ALLOY ALASSB/ALGAASSB DISTRIBUTED BRAGG REFLECTORS LATTICE-MATCHED TO INP FOR 1.3-1.55-MU-M WAVELENGTH RANGE

被引：24

作者：

BLUM, O

FRITZ, IJ

DAWSON, LR

DRUMMOND, TJ

机构：

[1] Dept. 1312, MS0603. Sandia National Laboratories, Albuquerque, NM.

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 15期

关键词：

DISTRIBUTED BRAGG REFLECTOR LASERS; LASERS;

D O I：

10.1049/el:19950852

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report a distributed Bragg reflector (DBR) consisting of 15.5 periods of AlAsSb and AlGaAsSb digital alloy with a peak reflectivity >95% at 1.46 mu m. The DBR is grown by molecular beam epitaxy on an InP substrate.

引用

页码：1247 / 1248

页数：2

共 6 条

[1] HIGHLY REFLECTIVE, LONG-WAVELENGTH ALASSB/GAASSB DISTRIBUTED-BRAGG-REFLECTOR GROWN BY MOLECULAR-BEAM EPITAXY ON INP SUBSTRATES [J].

BLUM, O ;

FRITZ, IJ ;

DAWSON, LR ;

HOWARD, AJ ;

HEADLEY, TJ ;

KLEM, JF ;

DRUMMOND, TJ .

APPLIED PHYSICS LETTERS, 1995, 66 (03) :329-331

[2] MOLECULAR-BEAM EPITAXY-GROWN ALASSB/GAASSB DISTRIBUTED-BRAGG-REFLECTOR ON INP SUBSTRATE OPERATING NEAR 1.55-MU-M [J].

BLUM, O ;

FRITZ, IJ ;

DAWSON, LR ;

HOWARD, AJ ;

HEADLEY, TJ ;

OLSEN, JA ;

KLEM, JF ;

DRUMMOND, TJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02) :1122-1124

[3] HIGH REFLECTIVITY 1.55-MU-M (AL)GAASSB/ALASSB BRAGG REFLECTOR LATTICE-MATCHED ON INP SUBSTRATES [J].

LAMBERT, B ;

TOUDIC, Y ;

ROUILLARD, Y ;

GAUNEAU, M ;

BAUDET, M ;

ALARD, F ;

VALIENTE, I ;

SIMON, JC .

APPLIED PHYSICS LETTERS, 1995, 66 (04) :442-444

[4]

STUTZ CE, 1992, J VAC SCI TECHNOL B, V10, P893

[5] CHEMICAL BEAM EPITAXIALLY GROWN INP/INGAASP INTERFERENCE MIRROR FOR USE NEAR 1.55 MU-M WAVELENGTH [J].

TAI, K ;

MCCALL, SL ;

CHU, SNG ;

TSANG, WT .

APPLIED PHYSICS LETTERS, 1987, 51 (11) :826-827

[6]

YANO M, 1990, 6TH P INT C MOL BEAM

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