Monte Carlo study of spin relaxation in AlGaAs/GaAs quantum wells

被引:24
作者
Bournel, A [1 ]
Dollfus, P [1 ]
Cassan, E [1 ]
Hesto, P [1 ]
机构
[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France
关键词
D O I
10.1063/1.1316771
中图分类号
O59 [应用物理学];
学科分类号
摘要
An original approach is developed to investigate the electron spin dynamics in III-V quantum wells using a particle Monte Carlo transport model. We study the spin precession related to the D'yakonov-Perel' mechanism, which is believed to be the predominant spin relaxation phenomenon in AlGaAs/GaAs quantum wells at room temperature. Using a Monte Carlo approach, the effect of electron/crystal scatterings on the D'yakonov-Perel' mechanism can be both simply and accurately taken into account. Finally, including interface roughness in the calculation leads to spin relaxation times in good agreement with the experimental data. (C) 2000 American Institute of Physics. [S0003-6951(00)02641-3].
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页码:2346 / 2348
页数:3
相关论文
共 18 条
[1]   ENSEMBLE MONTE-CARLO SIMULATION FOR ELECTRON-TRANSPORT IN QUANTUM-WIRE STRUCTURES [J].
ANDO, YJ ;
CAPPY, A .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (06) :3983-3992
[2]   Spin-dependent transport phenomena in a HEMT [J].
Bournel, A ;
Dollfus, P ;
Bruno, P ;
Hesto, P .
PHYSICA B, 1999, 272 (1-4) :331-334
[3]   Room temperature spin relaxation in GaAs/AlGaAs multiple quantum wells [J].
Britton, RS ;
Grevatt, T ;
Malinowski, A ;
Harley, RT ;
Perozzo, P ;
Cameron, AR ;
Miller, A .
APPLIED PHYSICS LETTERS, 1998, 73 (15) :2140-2142
[4]   ELECTRONIC ANALOG OF THE ELECTROOPTIC MODULATOR [J].
DATTA, S ;
DAS, B .
APPLIED PHYSICS LETTERS, 1990, 56 (07) :665-667
[5]  
Dyakonov M. I., 1972, SOV PHYS-SOLID STATE, V13, P3023
[6]  
DYAKONOV MI, 1986, SOV PHYS SEMICOND+, V20, P110
[7]   Spin relaxation and all optical polarization switching at 1.52 micrometres in InGaAs(P)/InGaAsP multiple quantum wells [J].
Hyland, JT ;
Kennedy, GT ;
Miller, A ;
Button, CC .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (03) :215-221
[8]  
Jacoboni C., 1989, The Monte Carlo method for semiconductor device simulation, V1st, DOI DOI 10.1007/978-3-7091-6963-6
[9]  
LAU WH, 2000, CONDMAT0004461
[10]   SPIN SPLITTING IN SEMICONDUCTOR HETEROSTRUCTURES FOR B-]0 [J].
LOMMER, G ;
MALCHER, F ;
ROSSLER, U .
PHYSICAL REVIEW LETTERS, 1988, 60 (08) :728-731