Recrystallization and electrical properties of MeV P implanted 6H-SiC

被引：7

作者：

Harada, S ^{[1
]}

Motooka, T ^{[1
]}

机构：

[1] Kyushu Univ, Dept Mat Sci & Engn, Fukuoka 8128581, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 05期

关键词：

D O I：

10.1063/1.372234

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated structural changes and electrical activation processes in 8 MeV P+ ion implanted 6H-SiC at room temperature (RT) and 850 degrees C by means of transmission electron microscopy, secondary ion mass spectrometry, and current-voltage measurements. A buried amorphous layer was produced in the RT implanted sample, while no amorphization occurred and extended defects were formed in the 850 degrees C implanted sample. The amorphous layer was recrystallized after 1000 degrees C annealing, but electrical activation of implanted P was very weak. It was found that activation occurred at an annealing temperature of 1300 degrees C, which is lower than the typical annealing temperature, 1500 degrees C for similar to 100 KeV P+ implantation samples. The resistivity of the RT implanted sample was approximately a half of that in the 850 degrees C implanted sample probably due to the extended defects, which were stable even after 1300 degrees C annealing. (C) 2000 American Institute of Physics. [S0021-8979(00)08405-X].

引用

页码：2655 / 2657

页数：3

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