Outgassing of organic vapors from 193 nm photoresists: Impact on atmospheric purity near the lens optics

被引:38
作者
Kunz, RR [1 ]
Downs, DK [1 ]
机构
[1] MIT, Lincoln Lab, Lexington, MA 02420 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 06期
关键词
D O I
10.1116/1.591006
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Fourteen different 193 nm photoresists were tested for organic vapor outgassing after exposure and their outgassing rates were measured to be between 10(11) and 10(13) molecules cm(-2) s(-1), with the primary compounds being isobutene and benzylic photoacid generator fragments. Rough estimates indicate that for an outgassing rate of 10(11) molecules cm(-2) s(-1) and a well purged tool, organic vapor partial pressures between 10 ppb and 1 ppm are Likely, depending on the lens working distance. Higher levels of outgassing combined with poor ventilation can result in partial pressures in excess of 1 Torr, These values exceed the residual ambient levels expected in a fab and hence constitute an increased risk of contamination to the final optical element of 193 nm exposure tools. (C) 1999 American Vacuum Society. [S0734-211X(99) 17706-0].
引用
收藏
页码:3330 / 3334
页数:5
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