ZnO nanoneedles with tip surface perturbations: Excellent field emitters

被引：267

作者：

Li, YB ^{[1
]}

Bando, Y ^{[1
]}

Golberg, D ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 18期

关键词：

D O I：

10.1063/1.1738174

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnO nanoneedles were prepared on a silicon wafer through a chemical vapor deposition. The diameters of the needle tips were in a range of 20-50 nm. High-resolution transmission electron microscopy revealed that the nanoneedles were single crystals growing along the [001] direction and exhibiting multiple tip surface perturbations, just 1-3 nm in dimension. Field-emission measurements on the prepared nanostructures showed fairly low turn-on and threshold fields of 2.5 and 4.0 V/mum, respectively. The nanosize perturbations on the nanoneedle tips are assumed to cause such excellent field-emission performance. (C) 2004 American Institute of Physics.

引用

页码：3603 / 3605

页数：3

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