A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design

被引：246

作者：

Voinigescu, SP ^{[1
]}

Maliepaard, MC ^{[1
]}

Showell, JL ^{[1
]}

Babcock, GE ^{[1
]}

Marchesan, D ^{[1
]}

Schroter, M ^{[1
]}

Schvan, P ^{[1
]}

Harame, DL ^{[1
]}

机构：

[1] IBM CORP,DIV MICROBIOL,HOPEWELL JCT,NY 12533

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1997年 / 32卷 / 09期

关键词：

bipolar transistor; compact modeling; low noise; low-noise amplifier; low-noise transistor design; noise figure; noise matching; noise measurements; radio-frequency integrated circuit design; SiGe heterojunction bipolar transistor;

D O I：

10.1109/4.628757

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fully scalable, analytical HF noise parameter equations for bipolar transistors are presented and experimentally tested on high-speed Si and SiGe technologies, A technique for extracting the complete set of transistor noise parameters from Y parameter measurements only is developed and verified, Finally, the noise equations are coupled with scalable variants of the HICUM and SPICE-Gummel-Poon models and are employed in the design of tuned low noise amplifiers (LNA's) in the 1.9-, 2.4-, and 5.8-GHz bands.

引用

页码：1430 / 1439

页数：10

共 20 条

[1]

[Anonymous], URANIA LIVRE, VIII, P372

[2] A NEW METHOD FOR ON WAFER NOISE MEASUREMENT [J].