A NEW METHOD FOR ON WAFER NOISE MEASUREMENT

被引：81

作者：

DAMBRINE, G

HAPPY, H

DANNEVILLE, F

CAPPY, A

机构：

[1] Institut d'Electronique et de Microelectronique du Nord U.M.R. C.N.R.S. no. 9929, Departement Hyperfréqences es Semiconducteurs. Batiment P4, Universite des Sciences et Technologies de Lille, 59655 Villeneuve D'Ascq, Cedex

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1993年 / 41卷 / 03期

关键词：

D O I：

10.1109/22.223734

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method for measuring the noise parameters of MESFET's and HEMT's is presented. This new method is based on the fact that only three independent noise parameters are sufficient to fully describe the device noise performance. It is shown that two noise parameters (R(n) and \Y(opt\) can be directly obtained from the frequency variation of the noise figure F50 corresponding to a 50 OMEGA generator impedance. By using a theoretical relation between the intrinsic noise sources as additional data, the F50 measurement only can provide the four noise parameters. A good agreement with more conventional techniques is obtained.

引用

页码：375 / 381

页数：7

共 19 条

[1] DC, SMALL-SIGNAL, AND NOISE MODELING FOR 2-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS BASED ON ACCURATE CHARGE-CONTROL CHARACTERISTICS [J].