MICROWAVE NOISE CHARACTERIZATION OF GAAS-MESFETS - DETERMINATION OF EXTRINSIC NOISE PARAMETERS

被引：33

作者：

GUPTA, MS

GREILING, PT

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN & COMP SCI,CHICAGO,IL 60680

[2] UNIV CALIF LOS ANGELES,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1988年 / 36卷 / 04期

关键词：

SEMICONDUCTOR DEVICES; FIELD EFFECT - Mathematical Models;

D O I：

10.1109/22.3580

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A previously proposed noise equivalent circuit model for a GaAs MESFET (1987) is supplemented with a model for device parasitics, in order to calculate the noise parameters of a mounted GaAs MESFET. The calculated parameters are in good agreement with measured noise parameters from 2 to 18 GHz. The model is thus established as a valid representation of the noise properties of the device. The model is useful in that, compared with the measured and tabulated noise parameters, its elements are easier to obtain, and it serves as a simpler, more compact description of the noise characteristics of the MESFET.

引用

页码：745 / 751

页数：7

共 11 条

[1] EVALUATION OF EQUIVALENT EXTERNAL NOISE GENERATORS FOR PASSIVE NETWORKS [J].