NOISE MODELING IN SUBMICROMETER-GATE FETS

被引：31

作者：

CARNEZ, B

CAPPY, A

FAUQUEMBERGUE, R

CONSTANT, E

SALMER, G

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1981.20431

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：784 / 789

页数：6

共 16 条

[1] COMPARATIVE POTENTIAL PERFORMANCE OF SI, GAAS, GAINAS, INAS SUBMICROMETER-GATE FETS
CAPPY, A
CARNEZ, B
FAUQUEMBERGUES, R
SALMER, G
CONSTANT, E
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2158 - 2160
[2] CARNEZ B, 1980, J APPL PHYS, V51
[3] FAUQUEMBERGUE R, 1980, J APPL PHYS, V51
[4] OPTIMAL NOISE-FIGURE OF MICROWAVE GAAS-MESFETS
FUKUI, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) : 1032 - 1037
[5] GRAFFEUIL J, 1977, THESIS U TOULOUSE TO
[6] EFFECT OF IONIZED IMPURITY SCATTERING ON ELECTRON TRANSIT-TIME IN GAAS AND INP FETS
HILL, G
ROBSON, PN
MAJERFELD, A
FAWCETT, W
[J]. ELECTRONICS LETTERS, 1977, 13 (08) : 235 - 236
[7] FREQUENCY LIMITS OF GAAS AND INP FIELD-EFFECT TRANSISTORS
MALONEY, TJ
FREY, J
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (06) : 357 - 358
[8] SUPER LOW-NOISE GAAS-MESFETS WITH A DEEP-RECESS STRUCTURE
OHATA, K
ITOH, H
HASEGAWA, F
FUJIKI, Y
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1029 - 1034
[9] Pucel RA, 1975, ADV ELECTRONICS ELEC, V38, P195, DOI DOI 10.1016/S0065-2539(08)61205-6
[10] THEORY OF NOISY FOURPOLES
ROTHE, H
DAHLKE, W
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (06): : 811 - 818