DC, SMALL-SIGNAL, AND NOISE MODELING FOR 2-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS BASED ON ACCURATE CHARGE-CONTROL CHARACTERISTICS

被引：37

作者：

ANDO, Y

ITOH, T

机构：

[1] Microelectronics Research Laboratories, NEC Corporation, Kawasaki

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 01期

关键词：

D O I：

10.1109/16.43802

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have developed a practical model for dc, small-signal, and noise characteristics in two-dimensional electron gas field-effect transistors (2DEGFET’s, also called HEMT’s), where accurate charge-control characteristics are included based on analytical functions relating carrier concentration versus Fermi level. Using this model, the influence of drain current, frequency, and device parameters on noise figure (NF) was studied. In spite of simple calculation, the present theory explains the experimentally observed trend in NF behaviors. © 1990 IEEE

引用

页码：67 / 78

页数：12

共 37 条

[1] ACCURATE MODELING FOR PARASITIC SOURCE RESISTANCE IN TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS [J].