HIGH-FREQUENCY FET NOISE PERFORMANCE - A NEW APPROACH

被引：42

作者：

CAPPY, A ^{[1
]}

HEINRICH, W ^{[1
]}

机构：

[1] TH DARMSTADT, INST HOCHFREQUENZTECH, FACHBEREICH 18, D-6100 DARMSTADT, FED REP GER

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 02期

关键词：

D O I：

10.1109/16.19943

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：403 / 409

页数：7

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