HIGH-FREQUENCY FET NOISE PERFORMANCE - A NEW APPROACH

被引:42
作者
CAPPY, A [1 ]
HEINRICH, W [1 ]
机构
[1] TH DARMSTADT, INST HOCHFREQUENZTECH, FACHBEREICH 18, D-6100 DARMSTADT, FED REP GER
关键词
D O I
10.1109/16.19943
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:403 / 409
页数:7
相关论文
共 18 条
[11]  
Nougier J. P., 1981, Sixth International Conference on Noise in Physical Systems (NBS-SP-614), P42
[12]  
Pucel RA, 1975, ADV ELECTRONICS ELEC, V38, P195, DOI DOI 10.1016/S0065-2539(08)61205-6
[13]   2-DIMENSIONAL NUMERICAL FET MODEL FOR DC, AC, AND LARGE-SIGNAL ANALYSIS [J].
REISER, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (01) :35-45
[14]   A UNIPOLAR FIELD-EFFECT TRANSISTOR [J].
SHOCKLEY, W .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1365-1376
[15]  
SHOCKLEY W, 1966, QUANTUM THEORY ATOMS, P537
[16]   SMALL-SIGNAL HIGH-FREQUENCY THEORY OF FIELD-EFFECT TRANSISTORS [J].
VANDERZIEL, A ;
ERO, JW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (04) :128-+
[17]   NOISE IN SINGLE INJECTION DIODES .2. APPLICATIONS [J].
VANVLIET, KM ;
FRIEDMANN, A ;
ZIJLSTRA, RJJ ;
GISOLF, A ;
VANDERZIEL, A .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1814-1823