NOISE MODELING AND MEASUREMENT TECHNIQUES

被引：168

作者：

CAPPY, A

机构：

[1] Univ des Science et Technique de, Lille, Villeneuve d'Ascq, Fr, Univ des Science et Technique de Lille, Villeneuve d'Ascq, Fr

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1988年 / 36卷 / 01期

关键词：

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) - HIGH-FREQUENCY NOISE ANALYSIS - METAL SEMICONDUCTOR FET (MESFET);

D O I：

10.1109/22.3475

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1 / 10

页数：10

共 45 条

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