THE NOISE PROPERTIES OF HIGH ELECTRON-MOBILITY TRANSISTORS

被引：39

作者：

BROOKES, TM ^{[1
]}

机构：

[1] NATL RADIO ASTRON LAB,CHARLOTTESVILLE,VA 22903

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 01期

关键词：

D O I：

10.1109/T-ED.1986.22436

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：52 / 57

页数：6

共 15 条

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[3]

BROOKES TM, 1984, NOISE PROPERTIES HIG

[4]

CAMNITZ LH, 1984 ACC INT S GAAS

[5] METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET [J].

DELAGEBEAUDEUF, D ;

LINH, NT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) :955-960

[6] MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR [J].

DRUMMOND, TJ ;

MORKOC, H ;

LEE, K ;

SHUR, M .

ELECTRON DEVICE LETTERS, 1982, 3 (11) :338-341

[7]

FAWCETT W, 1969, PHYS LETT AUG, P578

[8] GENERAL THEORY FOR PINCHED OPERATION OF JUNCTION-GATE FET [J].

GREBENE, AB ;

GHANDHI, SK .

SOLID-STATE ELECTRONICS, 1969, 12 (07) :573-+

[9]

KLASSEN FM, 1967, IEEE T EDUC, V14, P368

[10]

LEE K, 1983, IEEE T ELECTRON DEV, V30, P207

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