NOISE MODELING IN SUBMICROMETER-GATE TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS

被引：71

作者：

CAPPY, A ^{[1
]}

VANOVERSCHELDE, A ^{[1
]}

SCHORTGEN, M ^{[1
]}

VERSNAEYEN, C ^{[1
]}

SALMER, G ^{[1
]}

机构：

[1] UNIV SCI & TECH LILLE 1, CNRS, LAB 287, CTR HYPERFREQUENCES & SEMICOND, VILLENEUVE DASCQ, FRANCE

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 12期

关键词：

D O I：

10.1109/T-ED.1985.22417

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2787 / 2796

页数：10

共 22 条

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[2] COMPARATIVE POTENTIAL PERFORMANCE OF SI, GAAS, GAINAS, INAS SUBMICROMETER-GATE FETS
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[3] THEORETICAL AND EXPERIMENTAL-STUDY OF HETEROJUNCTION FETS
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[J]. REVUE DE PHYSIQUE APPLIQUEE, 1983, 18 (11): : 719 - 726
[4] MODELING OF A SUBMICROMETER GATE FIELD-EFFECT TRANSISTOR INCLUDING EFFECTS OF NONSTATIONARY ELECTRON DYNAMICS
CARNEZ, B
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SALMER, G
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 784 - 790
[5] NOISE MODELING IN SUBMICROMETER-GATE FETS
CARNEZ, B
CAPPY, A
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CONSTANT, E
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (07) : 784 - 789
[6] QUARTER MICRON LOW-NOISE GAAS-FETS
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[J]. ELECTRON DEVICE LETTERS, 1982, 3 (12): : 401 - 403
[7] METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 955 - 960
[8] TRANSPORT IN MODULATION-DOPED STRUCTURES (ALXGA1-XAS/GAAS) AND CORRELATIONS WITH MONTE-CARLO CALCULATIONS (GAAS)
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[J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 277 - 279
[9] MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR
DRUMMOND, TJ
MORKOC, H
LEE, K
SHUR, M
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (11): : 338 - 341
[10] FENG M, 1984, APPL PHYS LETT, V44, P231, DOI 10.1063/1.94681

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