NOISE MODELING IN SUBMICROMETER-GATE TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS

被引:71
作者
CAPPY, A [1 ]
VANOVERSCHELDE, A [1 ]
SCHORTGEN, M [1 ]
VERSNAEYEN, C [1 ]
SALMER, G [1 ]
机构
[1] UNIV SCI & TECH LILLE 1, CNRS, LAB 287, CTR HYPERFREQUENCES & SEMICOND, VILLENEUVE DASCQ, FRANCE
关键词
D O I
10.1109/T-ED.1985.22417
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:2787 / 2796
页数:10
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