THEORETICAL AND EXPERIMENTAL-STUDY OF HETEROJUNCTION FETS

[1] CAPPY A, 1981, THESIS LILLE

[2] TWO-DIMENSIONAL ELECTRON-GAS MESFET STRUCTURE [J]. ELECTRONICS LETTERS, 1980, 16 (17) : 667 - 668

[3] DELAGEBEAUDEUF D, 1982, IEEE T ELEC DEVICES, V29, P950

[4] DELECLUSE P, 1983, JUI JOURN NAT SEM CO

[5] TRANSPORT IN MODULATION-DOPED STRUCTURES (ALXGA1-XAS/GAAS) AND CORRELATIONS WITH MONTE-CARLO CALCULATIONS (GAAS) [J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 277 - 279

[6] INFLUENCE OF ALXGA1-XAS BUFFER LAYERS ON THE PERFORMANCE OF MODULATION-DOPED FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 879 - 881

[7] ANALYSIS FOR OPTIMUM THRESHOLD VOLTAGE AND LOAD CURRENT OF E-D-TYPE GAAS DCFL CIRCUITS [J]. ELECTRONICS LETTERS, 1981, 17 (15) : 522 - 523

[8] LEE K, 1983, IEEE T ELECTRON DEV, V30, P207

[9] ENHANCEMENT-MODE HIGH ELECTRON-MOBILITY TRANSISTORS FOR LOGIC APPLICATIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) : L317 - L319

[10] SUB-FJ INVERTER ANALYSIS FOR GAAS VLSI [J]. ELECTRONICS LETTERS, 1983, 19 (06) : 231 - 232

[1] CAPPY A, 1981, THESIS LILLE

[2] TWO-DIMENSIONAL ELECTRON-GAS MESFET STRUCTURE [J]. ELECTRONICS LETTERS, 1980, 16 (17) : 667 - 668

[3] DELAGEBEAUDEUF D, 1982, IEEE T ELEC DEVICES, V29, P950

[4] DELECLUSE P, 1983, JUI JOURN NAT SEM CO

[5] TRANSPORT IN MODULATION-DOPED STRUCTURES (ALXGA1-XAS/GAAS) AND CORRELATIONS WITH MONTE-CARLO CALCULATIONS (GAAS) [J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 277 - 279

[6] INFLUENCE OF ALXGA1-XAS BUFFER LAYERS ON THE PERFORMANCE OF MODULATION-DOPED FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 879 - 881

[7] ANALYSIS FOR OPTIMUM THRESHOLD VOLTAGE AND LOAD CURRENT OF E-D-TYPE GAAS DCFL CIRCUITS [J]. ELECTRONICS LETTERS, 1981, 17 (15) : 522 - 523

[8] LEE K, 1983, IEEE T ELECTRON DEV, V30, P207

[9] ENHANCEMENT-MODE HIGH ELECTRON-MOBILITY TRANSISTORS FOR LOGIC APPLICATIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) : L317 - L319

[10] SUB-FJ INVERTER ANALYSIS FOR GAAS VLSI [J]. ELECTRONICS LETTERS, 1983, 19 (06) : 231 - 232