ANALYSIS OF CHARGE CONTROL IN PSEUDOMORPHIC TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS

被引:50
作者
ANDO, Y
ITOH, T
机构
[1] NEC, Kawasaki, Jpn
关键词
Electrons - Semiconducting Indium Compounds--Charge Carriers;
D O I
10.1109/16.8805
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An exact model for charge control in two-dimensional field-effect transistors (2DEGFETs) is discussed. The model is based on a first-principles theory, in which self-consistent quantum two-dimensional electron subbands and numerical solutions of Poisson's equation for band bending, space charge, and three-dimensional holes are included. The charge control in InGaAs/AlGaAs pseudomorphic 2DEGFETs is analyzed and compared with that in the GaAs/AlGaAs conventional 2DEGFET. It is shown that a quantum-well channel in the pseudomorphic 2DEGFET can achieve high carrier confinement as well as high carrier concentration. From the calculated gate capacitance-voltage behavior, a simple estimation for the device performance is obtained. The results indicate that the pseudomorphic 2DEGFET with a large condition band discontinuity at the channel interface can improve transconductance-gate voltage characteristics, and thus maximum transconductance, and the cutoff frequency-gate voltage characteristics.
引用
收藏
页码:2295 / 2301
页数:7
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