DETERMINATION OF CARRIER SATURATION VELOCITY IN HIGH-PERFORMANCE INYGA1-YAS/ALXGA1-XAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS (0 LESS-THAN-OR-EQUAL-TO-Y LESS-THAN-OR-EQUAL-TO-0.2)

被引：22

作者：

HENDERSON, TS

MASSELINK, WT

KOPP, W

MORKOC, H

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 05期

关键词：

D O I：

10.1109/EDL.1986.26376

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：288 / 290

页数：3

共 12 条

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KETTERSON, AA ;

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[7] CRYOGENIC OPERATION OF PSEUDOMORPHIC ALGAAS/INGAAS SINGLE-QUANTUM-WELL MODFETS [J].

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[8]

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[9]

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[10] AN IN0.15GA0.85 AS/GAAS PSEUDOMORPHIC SINGLE QUANTUM WELL HEMT [J].

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IEEE ELECTRON DEVICE LETTERS, 1985, 6 (10) :491-493

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