ELECTRON AND HOLE MOBILITY IN MODULATION DOPED GAINAS-AIINAS STRAINED LAYER SUPERLATTICE

被引：23

作者：

HIROSE, K ^{[1
]}

MIZUTANI, T ^{[1
]}

NISHI, K ^{[1
]}

机构：

[1] NEC CORP,OPTOELECTR RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 81卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(87)90379-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

SEMICONDUCTING GALLIUM ARSENIDE

引用

页码：130 / 135

页数：6

共 23 条

[1] ENHANCEMENT OF OPTICAL NONLINEARITY IN P-TYPE SEMICONDUCTOR QUANTUM WELLS DUE TO CONFINEMENT AND STRESS [J].

CHANG, YC .

APPLIED PHYSICS LETTERS, 1985, 46 (08) :710-712

[2] ELECTRON MOBILITIES IN IN0.2GA0.8AS/GAAS STRAINED-LAYER SUPER-LATTICES [J].

FRITZ, IJ ;

DAWSON, LR ;

ZIPPERIAN, TE .

APPLIED PHYSICS LETTERS, 1983, 43 (09) :846-848

[3] HALL-EFFECT MEASUREMENTS IN P-TYPE INGAAS GAAS STRAINED-LAYER SUPERLATTICES [J].

FRITZ, IJ ;

DAWSON, LR ;

DRUMMOND, TJ ;

SCHIRBER, JE ;

BIEFELD, RM .

APPLIED PHYSICS LETTERS, 1986, 48 (02) :139-141

[4]

Hayes J. R., 1982, GaInAsP alloy semiconductors, P189

[5]

HIROSE K, 1986, I PHYS C SER, V79, P529

[6]

HIROSHIMA T, 1986, COMMUNICATION

[7] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :118-125

[8] PREPARATION AND PROPERTIES OF EPITAXIAL INAS [J].

MCCARTHY, JP .

SOLID-STATE ELECTRONICS, 1967, 10 (07) :649-&

[9] HIGH MOBILITY GAINAS THIN-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MIZUTANI, T ;

HIROSE, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02) :L119-L121

[10] OPTICAL CHARACTERIZATION OF INGAAS-INALAS STRAINED-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY [J].

NISHI, K ;

HIROSE, K ;

MIZUTANI, T .

APPLIED PHYSICS LETTERS, 1986, 49 (13) :794-796

← 1 2 3 →