OPTICAL CHARACTERIZATION OF INGAAS-INALAS STRAINED-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY

被引：35

作者：

NISHI, K ^{[1
]}

HIROSE, K ^{[1
]}

MIZUTANI, T ^{[1
]}

机构：

[1] NEC CORP,FUNDAMENTAL RES LABS,KAWASAKI,KANAGAWA 213,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 13期

关键词：

D O I：

10.1063/1.97549

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：794 / 796

页数：3

共 13 条

[1] MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8775-8792

[2] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29

[3]

ADAMS AR, 1986, ELECTRON LETT, V22, P250

[4] ENERGY BAND-GAP SHIFT WITH ELASTIC STRAIN IN GAXIN1-XP EPITAXIAL LAYERS ON (001) GAAS SUBSTRATES [J].

ASAI, H ;

OE, K .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :2052-2056

[5] ENHANCEMENT OF OPTICAL NONLINEARITY IN P-TYPE SEMICONDUCTOR QUANTUM WELLS DUE TO CONFINEMENT AND STRESS [J].

CHANG, YC .

APPLIED PHYSICS LETTERS, 1985, 46 (08) :710-712

[6] HALL-EFFECT MEASUREMENTS IN P-TYPE INGAAS GAAS STRAINED-LAYER SUPERLATTICES [J].

FRITZ, IJ ;

DAWSON, LR ;

DRUMMOND, TJ ;

SCHIRBER, JE ;

BIEFELD, RM .

APPLIED PHYSICS LETTERS, 1986, 48 (02) :139-141

[7]

GOLDSTEIN L, 1985, J VAC SCI TECHNOL B, V3, P9471

[8] ELEMENTARY THEORY OF HETEROJUNCTIONS [J].

HARRISON, WA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :1016-1021

[9]

HIROSE K, 1986, 12TH P INT S GAAS RE, P529

[10] PHOTOLUMINESCENCE STUDY OF INXAL1-XAS-GAAS STRAINED-LAYER SUPERLATTICES [J].

KATO, H ;

IGUCHI, N ;

CHIKA, S ;

NAKAYAMA, M ;

SANO, N .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) :588-592

← 1 2 →