ACCURATE MODELING FOR PARASITIC SOURCE RESISTANCE IN TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS

被引：18

作者：

ANDO, Y

ITOH, T

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 06期

关键词：

D O I：

10.1109/16.24345

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1036 / 1044

页数：9

共 21 条

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