A NOVEL 2DEGFET MODEL BASED ON THE PARABOLIC VELOCITY-FIELD CURVE APPROXIMATION

被引：19

作者：

HIDA, H

ITOH, T

OHATA, K

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 10期

关键词：

D O I：

10.1109/T-ED.1986.22710

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1580 / 1586

页数：7

共 23 条

[1]

BERENZ JJ, 1984, IEEE MTTS INT MICROW, P98

[2] A NEW MODEL FOR MODULATION-DOPED FETS [J].

CIL, CZ ;

TANSAL, S .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (08) :434-436

[3] ULTRA-HIGH-SPEED RING OSCILLATORS BASED ON SELF-ALIGNED-GATE MODULATION-DOPED N+-(AL,GA)AS/GAAS FETS [J].

CIRILLO, NC ;

ABROKWAH, JK ;

FRAASCH, AM ;

VOLD, PJ .

ELECTRONICS LETTERS, 1985, 21 (17) :772-773

[4] METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET [J].

DELAGEBEAUDEUF, D ;

LINH, NT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) :955-960

[5] FIELD-DEPENDENCE OF MOBILITY IN AL0.2GA0.8AS-GAAS HETEROJUNCTIONS AT VERY LOW FIELDS [J].

DRUMMOND, TJ ;

KEEVER, M ;

KOPP, W ;

MORKOC, H ;

HESS, K ;

STREETMAN, BG ;

CHO, AY .

ELECTRONICS LETTERS, 1981, 17 (15) :545-547

[6] LOW-NOISE HIGH ELECTRON-MOBILITY TRANSISTORS FOR MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS [J].

GUPTA, AK ;

SOVERO, EA ;

PIERSON, RL ;

STEIN, RD ;

CHEN, RT ;

MILLER, DL ;

HIGGINS, JA .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (02) :81-82

[7]

HENDEL RH, 1984, DEC IEDM, P857

[8]

HIDA H, 1984, 11TH P INT S GAAS RE, P551

[9]

HIDA H, 1983, 44TH P AUT M JAP SOC, P501

[10]

INOUE M, 1982, J PHYS S C, V7, P19

← 1 2 3 →