A NOVEL 2DEGFET MODEL BASED ON THE PARABOLIC VELOCITY-FIELD CURVE APPROXIMATION

被引:19
作者
HIDA, H
ITOH, T
OHATA, K
机构
关键词
D O I
10.1109/T-ED.1986.22710
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:1580 / 1586
页数:7
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[22]   MODELING FOR AN ALGAAS/GAAS HETEROSTRUCTURE DEVICE USING MONTE-CARLO SIMULATION [J].
TOMIZAWA, M ;
YOSHII, A ;
YOKOYAMA, K .
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (07) :332-334
[23]   TWO-DIMENSIONAL TRANSIENT SIMULATION OF AN IDEALIZED HIGH ELECTRON-MOBILITY TRANSISTOR [J].
WIDIGER, DJ ;
KIZILYALLI, IC ;
HESS, K ;
COLEMAN, JJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) :1092-1102