A NEW MODEL FOR MODULATION-DOPED FETS

被引：12

作者：

CIL, CZ

TANSAL, S

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 08期

关键词：

D O I：

10.1109/EDL.1985.26181

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：434 / 436

页数：3

共 12 条

[1]

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[2] EFFECT OF THE VELOCITY-FIELD PEAK ON I-V-CHARACTERISTICS OF GAAS-FETS [J].

CHAUDHURI, S ;

LOOK, DC .

SOLID-STATE ELECTRONICS, 1983, 26 (08) :811-814

[3] TRANSPORT IN MODULATION-DOPED STRUCTURES (ALXGA1-XAS/GAAS) AND CORRELATIONS WITH MONTE-CARLO CALCULATIONS (GAAS) [J].

DRUMMOND, TJ ;

KOPP, W ;

MORKOC, H ;

KEEVER, M .

APPLIED PHYSICS LETTERS, 1982, 41 (03) :277-279

[4] MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR [J].

DRUMMOND, TJ ;

MORKOC, H ;

LEE, K ;

SHUR, M .

ELECTRON DEVICE LETTERS, 1982, 3 (11) :338-341

[5] CURRENT SATURATION AND SMALL-SIGNAL CHARACTERISTICS OF GAAS FIELD-EFFECT TRANSISTORS [J].

HOWER, PL ;

BECHTEL, NG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) :213-220

[6] LOW-NOISE TWO-DIMENSIONAL ELECTRON-GAS FET [J].

LAVIRON, M ;

DELAGEBEAUDEUF, D ;

DELESCLUSE, P ;

CHAPLART, J ;

LINH, NT .

ELECTRONICS LETTERS, 1981, 17 (15) :536-537

[7]

LEE K, 1983, IEEE T ELECTRON DEV, V30, P207

[8] VOLGATE-CURRENT CHARACTERISTICS OF GAAS J-FETS IN HOT ELECTRON RANGE [J].

LEHOVEC, K ;

ZULEEG, R .

SOLID-STATE ELECTRONICS, 1970, 13 (10) :1415-&

[9] THE PRESENT STATUS OF MODULATION-DOPED AND INSULATED-GATE FIELD-EFFECT TRANSISTORS IN III-V-SEMICONDUCTORS [J].

MIMURA, T .

SURFACE SCIENCE, 1982, 113 (1-3) :454-463

[10]

Sze S, 1981, PHYS SEMICONDUCTOR D, P324

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