Plasma composition during plasma-enhanced chemical vapor deposition of carbon nanotubes

被引:52
作者
Bell, MS [1 ]
Lacerda, RG
Teo, KBK
Rupesinghe, NL
Amaratunga, GAJ
Milne, WI
Chhowalla, M
机构
[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
[2] Rutgers State Univ, Piscataway, NJ 08854 USA
关键词
D O I
10.1063/1.1782256
中图分类号
O59 [应用物理学];
学科分类号
摘要
Neutral species and positive ions were extracted directly from a C2H2:NH3 plasma used to grow vertically aligned carbon nanotubes (CNTs) and analyzed by mass spectrometry. We observe that NH3 suppresses C2H2 decomposition and encourages CNT formation. We show that the removal of excess carbon, essential for obtaining nanotubes without amorphous carbon deposits, is achieved through gas phase reactions which form mainly HCN. We determine an optimum C2H2:NH3 gas ratio which is consistent with previous observations based upon postdeposition analysis. We find, in contrast to thin film growth by plasma-enhanced chemical vapor deposition, that the optimum condition does not correspond to the highest level of ionization. We also provide evidence that C2H2 is the dominant precursor for CNTs in our experiments. (C) 2004 American Institute of Physics.
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收藏
页码:1137 / 1139
页数:3
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