Revisiting the thermal-spike concept in ion-surface interactions

被引:65
作者
Miotello, A [1 ]
Kelly, R [1 ]
机构
[1] IST NAZL FIS MAT, I-38050 POVO, TN, ITALY
关键词
D O I
10.1016/S0168-583X(96)00665-9
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
In recent years many groups have advocated a thermal-spike model to explain a variety of experimental results in ion-irradiation of solids, as for example sputtering, mixing, compositional change, structural change, and track formation. The latter include crystal-to-amorphous transitions as well as track formation due to MeV/u particles. In this paper we reconsider the phenomena occurring during ion impact of solids looking at the time scale generally indicated as relevant for thermal-spike effects, namely a picosecond scale as shown by molecular dynamics. Sputtering, mixing, and track formation, however, will be analyzed in more detail. We consider first ion-beam sputtering and reiterate (as is already well-known) that yields which increase with the bulk temperature most often indicate merely the onset of normal vaporization. Indeed, only simulations appear to be capable of giving insight even if the information is sometimes tentative. In mixing, ballistic transport is important but not dominant. It is often argued that the additional transport is provided by thermal spikes but it is noted that such an assumption is normally not required by the experimental results. What is more relevant is a role for residual defects such that the total diffusion flux includes (if the defects are chemically guided) a modified Darken factor, or (if the defects are not chemically guided) simply an increased diffusivity. The time scale (min), distances (well beyond the collision cascade), temperature sensitivity (changes of as little as 75 K are relevant), and correlation with vacancy properties (thence with the solid rather than liquid state) which are relevant to these residual defects are not understandable in terms of thermal spikes. We finally consider track formation. Recent work claiming that track formation in solids, irradiated with heavy ions, may be understood in terms of thermal spikes is reconsidered to show that the thermal-spike model is utilized without considering all the relevant phenomena included in irradiation-induced heating and phase transitions. For example, a comparison of fs-laser pulse irradiation of Si with swift heavy-ion irradiation, shows that melting is possible in the first case since the excited electrons have a low and more or less restricted energy while in the case of swift ion-irradiation, the motion of the excited electrons includes a ballistic component which does not favour the localization of the thermal energy necessary to induce lattice melting. It is concluded that track formation is better understandable in a more general framework of defect-induced processes in solids.
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页码:458 / 469
页数:12
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