Use of SiGe bipolar transistors for cryogenic readout of SQUIDs

被引：24

作者：

Kiviranta, Mikko ^{[1
]}

机构：

[1] VTT, FI-02044 Espoo, Finland

来源：

SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 2006年 / 19卷 / 12期

关键词：

D O I：

10.1088/0953-2048/19/12/014

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured characteristics and noise of four commercially available SiGe heterojunction bipolar transistors at 4.2 K. One device exhibits 75 pV Hz(-1/2) white noise and a 1/f noise corner of 20 kHz at 9 mW power dissipation, proving suitable for readout of SQUIDs immersed in liquid He. Another device exhibits 370 pV Hz(-1/2) white noise and a 1/f noise corner of 5 kHz at 50 mu W dissipation, and still gives useable gain at 7 mu W dissipation. This device is useful for SQUID multiplexers intended for closed-cycle refrigerators, in which the cooling power is limited. The achievable dissipation is even compatible for operation in the low-temperature stages of dilution refrigerators or ADRs. Furthermore, SiGe-based dc SQUID readout with 0.35 mu Phi(0) Hz(-1/2) flux noise was demonstrated. Applying negative flux feedback yielded a slew rate exceeding 50 Phi(0) mu s(-1).

引用

页码：1297 / 1302

页数：6

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