Hall measurements of bilayer structures

被引：10

作者：

Jain, SH ^{[1
]}

Griffin, PB ^{[1
]}

Plummer, JD ^{[1
]}

机构：

[1] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 02期

关键词：

D O I：

10.1063/1.1529093

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hall measurements performed on a p-type layer on an n-type substrate showed n-type characteristics at room temperature, p-type behavior at low temperature, and a singularity at intermediate temperatures. The results can be explained by considering the contribution to the Hall readings from the n-type substrate, which is made possible by leakage through the p-n junction. A theoretical description has been developed to understand Hall coefficients in bilayer structures with opposite carrier types. (C) 2003 American Institute of Physics.

引用

页码：1060 / 1063

页数：4

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