FABRICATION OF PATTERNED GEXSI1-X/SI LAYERS BY PULSED LASER-INDUCED EPITAXY

Selective growth of GexSi1-x on Si is demonstrated for the first time using a pulsed laser induced epitaxy technique, combined with either standard oxide or liftoff patterning processes. Two different dimensions of Ge0.12Si0.88/Si lateral wells are formed, 3.5-mu-m wide by 1700 angstrom deep, and 6-mu-m wide by 1300 angstrom deep. High-resolution transmission electron microscopy, combined with energy-dispersive x-ray imaging, reveals a well-defined two-dimensional (2D) Ge redistribution profile with no significant line or surface defects observed. The 2D Ge well distribution profiles, governed by heat and mass transport during the laser processing, are discussed.