Identification of non-radiative recombination paths in microcrystalline silicon (μc-Si:H)

被引：31

作者：

Kanschat, P ^{[1
]}

Lips, K ^{[1
]}

Fuhs, W ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, Abt Photovolta, D-12489 Berlin, Germany

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2000年 / 266卷

关键词：

D O I：

10.1016/S0022-3093(99)00807-8

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on a study of photoconductivity, electron spin resonance (ESR) as well as electrically detected magnetic resonance (EDMR) on nominally undoped mu c-Si:H deposited by the hot-wire technique. At low temperature (T < 50 K) there are similarities in the properties of mu c-Si:H and a-Si:H. We conclude that the g = 1.998 center, formerly assigned to conduction electrons. CE, monitored by ESR is a shallow localized state close to the conduction band and that recombination follows distant pair kinetics. According to EDMR the relevant recombination step is tunneling from CE states to neutral Si dangling bonds. At T < 50 K photoconductivity arises from hopping transport in localized band tail states. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：524 / 528

页数：5

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