DEPENDENCES OF ELECTRON-SPIN-RESONANCE AND ELECTRICAL-PROPERTIES ON P DOPING RATIO FOR MICROCRYSTALLINE SI

被引:7
作者
HASEGAWA, S
NARIKAWA, S
KURATA, Y
机构
来源
PHYSICA B & C | 1983年 / 117卷 / MAR期
关键词
D O I
10.1016/0378-4363(83)90692-7
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:914 / 916
页数:3
相关论文
共 10 条
[1]   THEORY OF THE EFFECT OF SPIN-ORBIT COUPLING ON MAGNETIC RESONANCE IN SOME SEMICONDUCTORS [J].
ELLIOTT, RJ .
PHYSICAL REVIEW, 1954, 96 (02) :266-279
[2]   RF POWER AND TEMPERATURE DEPENDENCES IN GD ALPHA-SI PRODUCED FROM HEATED SIH4 [J].
HASEGAWA, S ;
KURATA, Y ;
IMAI, Y ;
NARIKAWA, S .
JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :675-678
[3]   ELECTRON-SPIN-RESONANCE IN DOPED CVD AMORPHOUS-SILICON FILMS [J].
HASEGAWA, S ;
KASAJIMA, T ;
SHIMIZU, T .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (01) :149-156
[4]   ELECTRICAL ACTIVATION PROCESS OF PHOSPHORUS ATOMS WITH ANNEALING FOR DOPED CVD POLY-SI [J].
HASEGAWA, S ;
KASAJIMA, T ;
SHIMIZU, T .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :7256-7257
[5]   THE ELECTRICAL RESISTANCE OF BINARY METALLIC MIXTURES [J].
LANDAUER, R .
JOURNAL OF APPLIED PHYSICS, 1952, 23 (07) :779-784
[6]   NUCLEATION OF MICROCRYSTALLITES IN PHOSPHORUS-DOPED SI-H FILMS [J].
MISHIMA, Y ;
HAMASAKI, T ;
KURATA, H ;
HIROSE, M ;
OSAKA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) :L121-L123
[7]  
QUIRT JD, 1972, PHYS REV, V135, P1716
[8]   ELECTRONIC-PROPERTIES OF MICROCRYSTALLINE SILICON FILMS PREPARED IN A GLOW-DISCHARGE PLASMA [J].
SPEAR, WE ;
WILLEKE, G ;
LECOMBER, PG ;
FITZGERALD, AG .
JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :257-260
[9]   PROPERTIES OF MICROCRYSTALLINE P-DOPED GLOW-DISCHARGE SI-H FILMS [J].
UCHIDA, Y ;
ICHIMURA, T ;
UENO, M ;
OHSAWA, M .
JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :265-268
[10]   ELECTRIC CONDUCTION IN PHOSPHORUS DOPED SILICON AT LOW TEMPERATURES [J].
YAMANOUCHI, C ;
MIZUGUCHI, K ;
SASAKI, W .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1967, 22 (03) :859-+