RF POWER AND TEMPERATURE DEPENDENCES IN GD ALPHA-SI PRODUCED FROM HEATED SIH4

[1] PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON [J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 695 - 712

[2] POLYCRYSTALLINE SILICON FILMS DEPOSITED IN A GLOW-DISCHARGE AT TEMPERATURES BELOW 250-DEGREES-C [J]. APPLIED PHYSICS LETTERS, 1980, 36 (02) : 163 - 165

[3] DEFECTS IN PLASMA-DEPOSITED A-SI-H [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) : 393 - 403

[4] Loveland R. J., 1973, Journal of Non-Crystalline Solids, V13, P55, DOI 10.1016/0022-3093(73)90035-5

[5] MATZUDA A, 1980, JAP J APPL PHYS, V19, pL305

[6] NUCLEATION OF MICROCRYSTALLITES IN PHOSPHORUS-DOPED SI-H FILMS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) : L121 - L123

[7] POLYCRYSTALLINE SILICON BY GLOW-DISCHARGE TECHNIQUE [J]. APPLIED PHYSICS LETTERS, 1979, 35 (09) : 686 - 687

[8] PROPERTIES OF HEAVILY DOPED GD-SI WITH LOW RESISTIVITY [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 34 (01) : 1 - 1

[1] PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON [J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 695 - 712

[2] POLYCRYSTALLINE SILICON FILMS DEPOSITED IN A GLOW-DISCHARGE AT TEMPERATURES BELOW 250-DEGREES-C [J]. APPLIED PHYSICS LETTERS, 1980, 36 (02) : 163 - 165

[3] DEFECTS IN PLASMA-DEPOSITED A-SI-H [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) : 393 - 403

[4] Loveland R. J., 1973, Journal of Non-Crystalline Solids, V13, P55, DOI 10.1016/0022-3093(73)90035-5

[5] MATZUDA A, 1980, JAP J APPL PHYS, V19, pL305

[6] NUCLEATION OF MICROCRYSTALLITES IN PHOSPHORUS-DOPED SI-H FILMS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) : L121 - L123

[7] POLYCRYSTALLINE SILICON BY GLOW-DISCHARGE TECHNIQUE [J]. APPLIED PHYSICS LETTERS, 1979, 35 (09) : 686 - 687

[8] PROPERTIES OF HEAVILY DOPED GD-SI WITH LOW RESISTIVITY [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 34 (01) : 1 - 1