ELECTRICAL ACTIVATION PROCESS OF PHOSPHORUS ATOMS WITH ANNEALING FOR DOPED CVD POLY-SI

The electrical activation process of the incorporated P atoms with annealing for CVD poly-Si is investigated using ESR. As a result, it is concluded that the P atoms act first as compensators on ESR centers due to dangling bonds, and conduction electrons are supplied from the remaining P atoms. Furthermore, the following possibilities are suggested: (1) The increase of the conduction electron density with annealing is not due to the increase of the crystalline region, but the increase of the conduction electron density in crystallites due to the decrease of defect density. (2) The mobility in crystallites is determined mainly by P impurity scattering as in crystalline Si.