ELECTRON-SPIN RESONANCE STUDIES ON ION-IMPLANTED SILICON .2. CONDUCTION ELECTRONS

被引：10

作者：

HASEGAWA, S ^{[1
]}

KARIMOTO, H ^{[1
]}

SHIMIZU, T ^{[1
]}

机构：

[1] KANAZAWA UNIV,FAC TECHNOL,DEPT ELECT,KANAZAWA,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1973年 / 12卷 / 08期

关键词：

D O I：

10.1143/JJAP.12.1190

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1190 / 1197

页数：8

共 11 条

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ICHIDA, K ;

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[4] ELECTRON SPIN RESONANCE OF CONDUCTION ELECTRONS IN PHOSPHORUS ION-IMPLANTED SILICON [J].

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[6] EFFECT OF DOPING ON ELECTRON SPIN RESONANCE IN PHOSPHORUS DOPED SILICON .3. ABSORPTION INTENSITY [J].

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[7] EFFECT OF DOPING ON ELECTRON SPIN RESONANCE IN PHOSPHORUS DOPED SILICON .4. EXPERIMENTAL STUDY AT LIQUID HELIUM TEMPERATURE [J].

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[8]

Lindhard J., 1963, VIDENSK SELSK MAT FY, V33, P1, DOI DOI 10.1002/ADMA.200904153

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[10] ABSOLUTE SPIN SUSCEPTIBILITIES AND OTHER ESR PARAMETERS OF HEAVILY DOPED TYPE SILICON .1. METALLIC SAMPLES [J].

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