Effect of atomic hydrogen on the growth of Ge/Si(100)

被引：20

作者：

Kahng, SJ ^{[1
]}

Park, JY ^{[1
]}

Booh, KH ^{[1
]}

Lee, J ^{[1
]}

Khang, Y ^{[1
]}

Kuk, Y ^{[1
]}

机构：

[1] SEOUL NATL UNIV,DEPT PHYS,SEOUL 151742,SOUTH KOREA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1997年 / 15卷 / 03期

关键词：

D O I：

10.1116/1.580624

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Dynamically supplied atomic hydrogen was used for a surfactant growth of Ce on a Si(100) surface. The transition from three-dimensional to two-dimensional growth of Ge was observed as the hydrogen flux was increased to similar to 1 ML/s in scanning tunneling microscope images. Layer-by-layer growth was successfully achieved up to 5 ML of Ge in the presence of atomic hydrogen. Observed missing dimer rows, irregular trench structures, and new ''pin holes'' are believed to be the product of strain relieving mechanism. The layer-by-layer growth can be understood both by energetics and kinetic pathway arguments. (C) 1997 American Vacuum Society.

引用

页码：927 / 929

页数：3

共 19 条

[1] Adsorption of hydrogen on a Ge covered Si(100) surface [J].