Photoluminescence properties of ZnO epitaxial layers grown on lattice-matched ScAlMgO4 substrates

被引：33

作者：

Makino, T ^{[1
]}

Tamura, K

Chia, CH

Segawa, Y

Kawasaki, M

Ohtomo, A

Koinuma, H

机构：

[1] RIKEN, Inst Phys & Chem Res, Photodynam Res Ctr, Sendai, Miyagi 9800845, Japan

[2] Tokyo Inst Technol, Dept Innovat & Engn Mat, Yokohama, Kanagawa 2268502, Japan

[3] Tohoku Univ, Dept Phys, Sendai, Miyagi 9808578, Japan

[4] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[5] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 12期

关键词：

D O I：

10.1063/1.1519336

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence (PL) properties of ZnO films grown epitaxially on lattice-matched ScAlMgO4 substrates are investigated. PL spectra of ZnO layers measured at 5 K are dominated by neutral-acceptor bound exciton emission at 3.359 eV (I-6) with a linewidth of 0.8 meV. Free exciton emission develops as temperature is raised and eventually dominates at temperatures higher than 120 K. Temperature dependence of intensity of the free exciton emission is discussed. (C) 2002 American Institute of Physics.

引用

页码：7157 / 7159

页数：3

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