Damage evolution in crystalline InP during irradiation with swift Xe ions

被引：39

作者：

Gaiduk, PI

Komarov, FF

Wesch, W

机构：

[1] Belarusian State Univ, Dept Phys Elect, Minsk 220064, BELARUS

[2] Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2000年 / 164卷

关键词：

D O I：

10.1016/S0168-583X(99)01005-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Defects in single-crystalline InP induced by relaxation of electronic excitations from 250 MeV Xe ions are investigated by transmission electron microscopy (TEM) in both conventional and high-resolution modes. The formation of latent tracks is investigated as a function of the ion fluence and irradiation temperature. The morphology and atomic structure of the tracks are analyzed. The results are discussed in the frame of a thermal spike approach which assumes both track melting and imperfect crystallization. A shock wave generation around the trajectory of ions is also supposed to take place at the early stage of track formation. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：377 / 383

页数：7

共 29 条

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