REMOVAL OF ELECTRICALLY ACTIVE DEFECTS IN SILICON BY 340 MEV XE ION-BOMBARDMENT

被引：7

作者：

ANTONOVA, IV ^{[1
]}

机构：

[1] HUMBOLDT UNIV BERLIN,D-10115 BERLIN,GERMANY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1995年 / 147卷 / 01期

关键词：

D O I：

10.1002/pssa.2211470130

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：K1 / K3

页数：3

共 11 条

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