INSITU SELF ION-BEAM ANNEALING OF DAMAGE IN SI DURING HIGH-ENERGY (0.53 MEV-2.56 MEV) AS+ ION-IMPLANTATION

被引：52

作者：

NAKATA, J

TAKAHASHI, M

KAJIYAMA, K

机构：

[1] Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo, 180, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 11期

关键词：

Compendex;

D O I：

10.1143/JJAP.20.2211

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SEMICONDUCTING SILICON

引用

页码：2211 / 2221

页数：11

共 15 条

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) :2205-2209

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