HIGH-ENERGY AS+ ION-IMPLANTATION INTO SI - ARSENIC PROFILES AND ELECTRICAL ACTIVATION CHARACTERISTICS

被引：13

作者：

TAKAHASHI, M

NAKATA, J

KAJIYAMA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 11期

关键词：

D O I：

10.1143/JJAP.20.2205

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2205 / 2209

页数：5

共 10 条

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