THERMAL-DIFFUSION OF ION-IMPLANTED ARSENIC IN SILICON

被引：17

作者：

TSUKAMOTO, K

AKASAKA, Y

KIJIMA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 01期

关键词：

D O I：

10.1143/JJAP.19.87

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：87 / 95

页数：9

共 20 条

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FAIR, RB ;

WEBER, GR .

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[4] PROFILE PARAMETERS OF IMPLANTED-DIFFUSED ARSENIC LAYERS IN SILICON [J].

FAIR, RB ;

TSAI, JCC .

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[5] DIFFUSION OF ION-IMPLANTED ARSENIC IN SILICON [J].

FAIR, RB ;

TSAI, JCC .

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[7]

HU SM, 1973, ATOMIC DIFFUSION SEM, pCH5

[8] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

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[9] ACCURATE THEORETICAL ARSENIC DIFFUSION PROFILES IN SILICON FROM PROCESSING DATA [J].

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[10]

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