UNIFORM DOPING OF CHANNELED-ION IMPLANTATION

被引：22

作者：

NISHI, H

INADA, T

SAKURAI, T

KANEDA, T

HISATSUGU, T

FURUYA, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 02期

关键词：

D O I：

10.1063/1.324687

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：608 / 613

页数：6

共 8 条

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[4]

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[8] PLANAR AND AXIAL CHANNELING OF 800-KEV ARSENIC IN [110] SILICON [J].

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APPLIED PHYSICS LETTERS, 1976, 29 (12) :770-772

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