plasma-enhanced chemical vapor deposition;
carbon nano tribe;
microstructure;
characterization;
chemical reaction;
D O I:
10.1016/j.diamond.2006.07.005
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
The plasma enhanced chemical vapor deposition (PECVD) of carbon nano-tubes (CNT) on nickel sheets is considered as efficient production method of great technologically interest. Different morphologies of CNT on Ni-sheets can be achieved by a variation of the process parameters, like partial pressure of the acetylene and ammoniac inlet gas mixture, the total gas pressure, and temperature. The results are summarized in a detailed growth model based on thermodynamic considerations. The conclusion from this model is that the production of single-wall nano-tubes (SWCNT), which is more desirable than multi wall variants (MWCNT) or graphite nano-fibers (GNF), requires the fastest reaction velocity for CNT formation. The PECVD supports the CNT formation, but for enhancement of the reaction velocity additional inhibitors are required. (c) 2006 Elsevier B.V. All rights reserved.
机构:Korea Inst Sci & Technol, Future Technol Res Div, Seoul 136791, South Korea
Ahn, HS
;
Lee, SC
论文数: 0引用数: 0
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机构:Korea Inst Sci & Technol, Future Technol Res Div, Seoul 136791, South Korea
Lee, SC
;
Han, S
论文数: 0引用数: 0
h-index: 0
机构:Korea Inst Sci & Technol, Future Technol Res Div, Seoul 136791, South Korea
Han, S
;
Lee, KR
论文数: 0引用数: 0
h-index: 0
机构:
Korea Inst Sci & Technol, Future Technol Res Div, Seoul 136791, South KoreaKorea Inst Sci & Technol, Future Technol Res Div, Seoul 136791, South Korea
Lee, KR
;
Kim, DY
论文数: 0引用数: 0
h-index: 0
机构:Korea Inst Sci & Technol, Future Technol Res Div, Seoul 136791, South Korea
机构:Korea Inst Sci & Technol, Future Technol Res Div, Seoul 136791, South Korea
Ahn, HS
;
Lee, SC
论文数: 0引用数: 0
h-index: 0
机构:Korea Inst Sci & Technol, Future Technol Res Div, Seoul 136791, South Korea
Lee, SC
;
Han, S
论文数: 0引用数: 0
h-index: 0
机构:Korea Inst Sci & Technol, Future Technol Res Div, Seoul 136791, South Korea
Han, S
;
Lee, KR
论文数: 0引用数: 0
h-index: 0
机构:
Korea Inst Sci & Technol, Future Technol Res Div, Seoul 136791, South KoreaKorea Inst Sci & Technol, Future Technol Res Div, Seoul 136791, South Korea
Lee, KR
;
Kim, DY
论文数: 0引用数: 0
h-index: 0
机构:Korea Inst Sci & Technol, Future Technol Res Div, Seoul 136791, South Korea